International Journal of Applied Research
Vol. 2, Issue 5, Part N (2016)
N-RADFET will able to replace P-RADFET
Yijun Zheng, Weimin Shi, Mingshan Wang, Hongyu Liu and Chunzhi Zhou
This paper proposes the concept of quasi sensitivity and ultimate sensitivity, thereby reveals the reason for exclusive R&D of P-channel Radiation Field Effect Transistor (P-RADFET). The N-RADFET that was generally negated could replace P-RADFET to become RADFET mainstream. Under identical conditions, N-RADFET’s ultimate sensitivity exceeds that of P-RADFET by 52.8%. The comparison is calculated based on the basic constant from published P-RADFET data. Therefore, this result does not need to do any experiments to verify.
How to cite this article:
Yijun Zheng, Weimin Shi, Mingshan Wang, Hongyu Liu and Chunzhi Zhou. N-RADFET will able to replace P-RADFET. International Journal of Applied Research. 2016; 2(5): 958-960.