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ISSN Print: 2394-7500, ISSN Online: 2394-5869, CODEN: IJARPF

Impact Factor: RJIF 8.4

International Journal of Applied Research

Vol. 2, Issue 5, Part N (2016)

N-RADFET will able to replace P-RADFET

Author(s)
Yijun Zheng, Weimin Shi, Mingshan Wang, Hongyu Liu and Chunzhi Zhou
Abstract
This paper proposes the concept of quasi sensitivity and ultimate sensitivity, thereby reveals the reason for exclusive R&D of P-channel Radiation Field Effect Transistor (P-RADFET). The N-RADFET that was generally negated could replace P-RADFET to become RADFET mainstream. Under identical conditions, N-RADFET’s ultimate sensitivity exceeds that of P-RADFET by 52.8%. The comparison is calculated based on the basic constant from published P-RADFET data. Therefore, this result does not need to do any experiments to verify.
Pages: 958-960  |  527 Views  14 Downloads
How to cite this article:
Yijun Zheng, Weimin Shi, Mingshan Wang, Hongyu Liu and Chunzhi Zhou. N-RADFET will able to replace P-RADFET. International Journal of Applied Research. 2016; 2(5): 958-960.
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International Journal of Applied Research