Vol. 3, Issue 10, Part B (2017)
Respons of different nitrogen levels on growth and yield of mungbean (Vigna radiata L. Wilczek) in semi-arid region of Kandahar Afghanistan
An experiment was conducted at the Experimental Farm of (ANASTU), Kandahar during 2015 to study the effect of varying nitrogen levels on growth and yield of mungbean (Vigna radiata L. Wilczek) in semi-arid region of Kandahar, Afghanistan. Experimental treatments comprised of seven N levels (0, 10, 20, 30, 40, 50, 60 kg N ha-1). The experiment was laid-out in a RCB design with three replications. The results indicated that nitrogen levels with a few expectations significantly influenced the growth parameters and yield characteristics of mungbean. The maximum plant height and net assimilation rate was recorded when nitrogen was applied @ 60 kg N ha-1 while the lowest were found in control treatment. The highest leaf area surface, leaf area index, total dry matter plant-1, number of primary branches plant-1, root dry weight, root length, root nodule count at maximum flowering, crop growth rate and relative growth rate were recorded from the plots supplied with N @ 40 kg ha-1. Total number of pods plant-1, pod length, number of grains pod-1, number of grains plant-1, grains weight plant-1 were significantly highest with treatment 30 kg N ha-1, but 1000-grains weight had non-significant influence due to N levels. Grain, straw and biological yield were found significantly higher (1.96, 5.29, 7.25 t ha-1) in treatment 30 kg N ha-1. Significantly lowest grain, straw and biological yields were recorded in control treatment. Harvest index was non-significant with maximum harvest index (27.7%) in treatment 20 kg N ha-1 and the lowest (24.3%) in control.
How to cite this article:
Mohammad Naim Jalali, Anil K Choudhary, Mohammad Qayom Mangle, Mohammad Amin Omari, Habibullah Hamayon, Said Rahim Ghafari, Anchal Dass. Respons of different nitrogen levels on growth and yield of mungbean (Vigna radiata L. Wilczek) in semi-arid region of Kandahar Afghanistan. Int J Appl Res 2017;3(10):102-106.