Vol. 3, Issue 3, Part H (2017)

Abstract
Semiconductor sensitized solar cells (SSSCs) based on hetrostructure of CdS/ZnO electrode and dye sensitized solar cell (DSSC) based on ZnO-Eosin-Y was fabricated. The CdS thin film was deposited onto ZnO layer by chemical bath deposition method. The structure, morphology, optical study of CdS/ZnO film and the solar cell performance of CdS/ZnO and ZnO-Eosin-Y PEC cell were investigated. The CdS, ZnO and CdS/ZnO onto glass and titanium substrates were characterized by Xray diffraction, atomic force microscopy, UV-vis spectroscopy. XRD shows that the films grown along the preferential directions. The crystallite size is calculated as 7 nm and 10 nm for ZnO and CdS films respectively using Scherrer’s formula. Photoelectrochemical (PEC) investigations were carried out using cell configuration as n-CdS/(1M NaOH + 1M Na2S + 1M S)/C. For dye-sensitized solar cell application, the dye-sensitized solar cell structure based on ZnO as a photo electrode was FTO/ZnO/Eosin-Y/electrolyte/Pt counter electrode. The photovoltaic output characteristics were used to calculate fill-factor (FF) and solar conversion efficiency (η). The CdS/ZnO hetrostructure film used for photoelectrochemical solar cells exhibited an energy conversion efficiency of about 1.08% at light intensity of 100 mW/cm2.