Vol. 3, Issue 8, Part L (2017)

Abstract
InN has been grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxial method. InN grown on sapphire or other substrate develops large numbers of dislocations at the interface. The dislocations affect the electrical properties of InN significantly. The theoretical values of mobility and thermo electric power of InN calculated based on two-layer model are in good agreement with the experimental data. Dislocations in InN crystal have adverse effect on the mobility and thermoelectric power as well.