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International Journal of Applied Research
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ISSN Print: 2394-7500, ISSN Online: 2394-5869, CODEN: IJARPF

IMPACT FACTOR (RJIF): 8.4

Vol. 4, Issue 1, Part F (2018)

Study the magneto-resistance of semiconductors

Study the magneto-resistance of semiconductors

Author(s)
Dr. Ranjeet Kumar
Abstract
The aim of this paper is to contemplate the properties of a semi-director bar exceptionally the magneto-obstruction, transporter focus, Energy band hole and the impact of attractive field on Hall coefficient utilizing another trial arrangement and furthermore talk about its application. Another target of this paper has been approving the Drude's Model and proposing an answer for the Hall Effect downside. The plan can be utilized as a substitution to the Hall Effect explore where as it joins the attractive field's impact for the Hall co-proficient.
Pages: 451-453  |  479 Views  71 Downloads


International Journal of Applied Research
How to cite this article:
Dr. Ranjeet Kumar. Study the magneto-resistance of semiconductors. Int J Appl Res 2018;4(1):451-453.
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