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ISSN Print: 2394-7500, ISSN Online: 2394-5869, CODEN: IJARPF

Impact Factor: RJIF 5.2

International Journal of Applied Research

Vol. 2, Issue 5, Part E (2016)

Study of static noise margin of SRAM based on supply voltage and topologies

Author(s)
P Shanmugavadivu, S Sugunadevi, B Sukanya
Abstract
This paper deals with the study of dependence of Static Noise Margin of SRAM on supply voltage and circuit topologies. Computation of Static Noise Margin of conventional 6T SRAM cell using butterfly curve and its corresponding read & writes operation where explained. This paper also investigates the effects of supply voltage, temperature & sizing of the transistors on SRAM performance. The results of SNM for various topologies and modifications in topologies for improving the performance in the subthreshold region and increasing the speed of the SRAM cell were discussed.
Pages: 285-288  |  516 Views  18 Downloads
How to cite this article:
P Shanmugavadivu, S Sugunadevi, B Sukanya. Study of static noise margin of SRAM based on supply voltage and topologies. International Journal of Applied Research. 2016; 2(5): 285-288.
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